| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1213 | Silicon PNP transistor for power switching and power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 203 K |
| ATA121302D1C | 1.25 Gb/s transimpedance amplifier | Anadigics-Inc- | - | - | 0°C | 85°C | 147 K |
| EIA1213-2P | 12.75-13.25GHz, 2W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| EIA1213-4P | 12.75-13.25GHz, 4W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| HA12134A | Dolby B-type noise reduction system, 300mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
| HA12134AF | Dolby B-type noise reduction system, 300mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
| HA12135A | Dolby B-type noise reduction system, 450mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
| HA12135AF | Dolby B-type noise reduction system, 450mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
| HA12136A | Dolby B-type noise reduction system, 580mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
| HA12136AF | Dolby B-type noise reduction system, 580mVrms dolby level | distributor | - | 16 | -40°C | 85°C | 130 K |
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