| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1708 | PNP epitaxial planar silicon transistor, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2064 | 3 | - | - | 124 K |
| HA17080APS | J-FET single operational amplifier | distributor | DIP | 8 | -20°C | 75°C | 54 K |
| HA17080PS | J-FET single operational amplifier | distributor | DIP | 8 | -20°C | 75°C | 54 K |
| HA17082APS | J-FET dual operational amplifiers | distributor | DIP | 8 | -20°C | 75°C | 54 K |
| HA17082PS | J-FET dual operational amplifiers | distributor | DIP | 8 | -20°C | 75°C | 54 K |
| HA17083AP | J-FET dual operational amplifiers | distributor | DIP | 14 | -20°C | 75°C | 54 K |
| HA17083P | J-FET dual operational amplifiers | distributor | DIP | 14 | -20°C | 75°C | 54 K |
| HA17084AP | J-FET quad operational amplifiers | distributor | DIP | 14 | -20°C | 75°C | 54 K |
| HA17084P | J-FET quad operational amplifiers | distributor | DIP | 14 | -20°C | 75°C | 54 K |
| UPA1708G-E1 | Nch enhancement type power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 59 K |
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