| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1763 | PNP epitaxial planar silicon transistor, high-speed switching application | SANYO-Electric-Co--Ltd- | 2059 | 3 | - | - | 98 K |
| 2SA1764 | PNP epitaxial planar silicon transistor, high-speed switching application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 98 K |
| 2SA1765 | PNP epitaxial planar silicon transistor, high-speed switching application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 96 K |
| 2SA1766 | PNP epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 81 K |
| 2SA1768 | PNP epitaxial planar silicon transistor, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2064 | 3 | - | - | 120 K |
| 2SA1769 | PNP epitaxial planar silicon transistor, 160V/700mA switching application | SANYO-Electric-Co--Ltd- | 2042A | 3 | - | - | 131 K |
| UPA1760G-E1 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 68 K |
| UPA1760G-E2 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 68 K |
| UPA1763G-E1 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 69 K |
| UPA1763G-E2 | N-channel enhancement type power MOS FET(Dual type) | NEC-Electronics-Inc- | - | - | - | - | 69 K |
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