Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA1960 | Small signal high frequency amplifier transistor | distributor | - | - | - | - | 29 K |
2SA1961 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
2SA1963 | PNP epitaxial planar silicon transistor, high-frequency low-noise amp, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | 2018B | 3 | - | - | 129 K |
2SA1964 | Transistor for audio amplifier output stages / TV velocity modulation | ROHM | - | 3 | -55°C | 150°C | 38 K |
2SA1965 | PNP epitaxial planar silicon transistor, muting circuit application | SANYO-Electric-Co--Ltd- | 2106A | 3 | - | - | 78 K |
2SA1967 | NPN triple diffused planar silicon transistor, high-voltage amp, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2010C | 3 | - | - | 83 K |
2SA1968 | PNP epitaxial planar silicon transistor, high-voltage amp, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2079B | 3 | - | - | 81 K |
2SA1969 | PNP epitaxial planar silicon transistor, high-frequency medium-output amplifier, medium current, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | 2038A | 3 | - | - | 111 K |
KTA1962 | General Purpose Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 79 K |
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