| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA2S077 | Silicon epitaxial planer type band switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
| MA2S111 | Silicon epitaxial planer type switching diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA2S728 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| MA2S784 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| MA2S784 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| MA2S784 | Silicon epitaxial planer type Schottky barrier diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 43 K |
| MA2SV03 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
| MA2SV04 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
| MA2SV05 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| MA2SV07 | Silicon epitaxial planer type variable capacitance diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| [1] 2 [3] [4] |
|---|
