Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AD645 | Low Noise, Low Drift FET Op Amp | Analog-Devices | - | - | - | - | 439 K |
AD6458 | GSM 3V Receiver IF Subsystem for operation at input frequencies as high as 400 MHz and IFs from 5 MHz up to 50 MHz | Analog-Devices | - | - | - | - | 268 K |
AD6459 | GSM 3V Receiver IF Subsystem for operation at input frequencies as high as 500 MHz and IFs from 5 MHz up to 50 MHz | Analog-Devices | - | - | - | - | 314 K |
AD645AH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645BH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645CH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645CH | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
AD645JN | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | DIP | 8 | 0°C | 70°C | 445 K |
AD645KN | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | DIP | 8 | 0°C | 70°C | 445 K |
AD645SH/883B | 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters | Analog-Devices | - | 8 | -40°C | 85°C | 445 K |
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