| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL22V10B-10LJ | High Performance E2CMOS PLD, 10ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-15QJ | High Performance E2CMOS PLD, 15ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10B-7LP | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10C-5LJ | High Performance E2CMOS PLD, 5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10C-7LJ | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10C-7LP | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-15QJ | High Performance E2CMOS PLD, 15ns, quarter power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-15QP | High Performance E2CMOS PLD, 15ns, quarter power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| GAL22V10D-7LJ | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | PLCC | 28 | 0°C | 75°C | 386 K |
| GAL22V10D-7LP | High Performance E2CMOS PLD, 7ns, low power | Lattice-Semiconductor-Corporation | DIP | 24 | 0°C | 75°C | 386 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] |
|---|
