| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28C256APM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28C256APM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28C64APM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28C64APM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28C64APM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28C64APM-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28C64APM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28C64APM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| [1] 2 [3] |
|---|
