| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| APT100GF60JR | 600V, 100A fast IGBT | Advanced-Power-Technology-APT | ISOTOP | 3 | -55°C | 150°C | 62 K |
| APT100S20B | 200V, 100A high voltage schottky diode | Advanced-Power-Technology-APT | - | 2 | -55°C | 150°C | 32 K |
| APT100S20LCT | 200V, 100A high voltage schottky diode | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 36 K |
| APT10M07JVR | 100V, 225A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 73 K |
| APT10M09B2VFR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 41 K |
| APT10M09B2VR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 39 K |
| APT10M09LVFR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 41 K |
| APT10M09LVR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 39 K |
| APT10M11B2VR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 63 K |
| APT10M11JVR | 100V, 100A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 70 K |
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