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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M5M4V64S20ATP-1264M (4-bank x 4194304-word x 4-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
M5M5V216ATP-55H2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP440°C70°C111 K
M5M5V216ATP-55HW2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP44-20°C85°C111 K
M5M5V216ATP-55L2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP440°C70°C111 K
M5M5V216ATP-55LI2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP44-40°C85°C111 K
M5M5V216ATP-55LW2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP44-20°C85°C111 K
M5M5V216ATP-70H2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP440°C70°C111 K
M5M5V216ATP-70HW2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP44-20°C85°C111 K
M5M5V216ATP-70L2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP440°C70°C111 K
M5M5V216ATP-70LI2097152-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupDIP44-40°C85°C111 K
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