| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EPA160B-100F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 30 K |
| EPA240B-100F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 30 K |
| MH16D72AKLB-10 | 1207959552-bit (16777216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 354 K |
| MH16S64FFB-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 580 K |
| MH16S64FFB-10L | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 580 K |
| MH16S64PHB-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 589 K |
| MH16S72AKLB-10 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 184 | 0°C | 70°C | 348 K |
| MH16S72PHB-10 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
| MH32S64PHB-10 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
| MH32S72PHB-10 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 595 K |
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