| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYQ28EB-200 | Dual ultrafast soft recovery rectifier, 200V, 10A, 25ns | distributor | - | 3 | -40°C | 150°C | 46 K |
| BYQ30EB-200 | Rectifier diode ultrafast, rugged. | Philips-Semiconductors | SOT404 | 3 | 0°C | 150°C | 63 K |
| BYV32EB-200 | Rectifier diode ultrafast, rugged. | Philips-Semiconductors | SOT404 | 3 | 0°C | 150°C | 53 K |
| BYV42EB-200 | Rectifier diode ultrafast, rugged. | Philips-Semiconductors | SOT404 | 3 | 0°C | 150°C | 53 K |
| BYV79EB-200 | 200 V, rectifier diode ultrafast, rugged | Philips-Semiconductors | SOT | 3 | - | - | 42 K |
| BYV79EB-200 | Rectifier diode ultrafast, rugged. | Philips-Semiconductors | SOT404 | 3 | 0°C | 150°C | 50 K |
| DS1220AB-200 | 2k x 8 CMOS nonvolatile SRAM, 200ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
| DS1220AB-200-IND | 2k x 8 CMOS nonvolatile SRAM, 200ns | Dallas-Semiconductor | DIP | 24 | -40°C | 85°C | 179 K |
| GS88436B-200 | 200MHz 7.5ns 256K x 36 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 798 K |
| GS88436B-200 | 200MHz 7.5ns 256K x 36 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 798 K |
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