| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| G648D00B100 | Liquid crystal display module | Seiko-Epson-Corporation | - | 14 | 0°C | 50°C | 1 M |
| PB1000/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1001/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1002/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1004/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1006/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1008/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| VHB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
| VLB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| VMB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
|---|
