| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1012(K) | Bipolar power switching Darlington transistor | distributor | - | - | - | - | 33 K |
| BB101C | Small signal high frequency amplifier field effect (FET) transistor | distributor | - | - | - | - | 48 K |
| BB101M | Small signal high frequency amplifier field effect (FET) transistor | distributor | - | - | - | - | 48 K |
| DB101 | 1.0A single-phase silicon bridge rectifier | distributor | - | 4 | -65°C | 150°C | 375 K |
| DB101S | 1.0A single-phase surface mount bridge rectifier | distributor | - | 4 | -55°C | 150°C | 424 K |
| EIB1011-2P | 10.7-11.7GHz, 2W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| EIB1011-4P | 10.7-11.7GHz, 4W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| MGRB1018 | Gallium arsenide power rectifier | Motorola | D2PAK | 4 | -55°C | 175°C | 153 K |
| MGRB1018 | Gallium arsenide power rectifier | Motorola | D2PAK | 4 | -55°C | 175°C | 153 K |
| PB1010/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
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