| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1016 | PNP epitaxial silicon transistor. Power amplifier vertical defclection output. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| CEB1012 | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 498 K |
| CEB1012L | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 497 K |
| DB101 | Single-phase glass passivated silicon bridge rectifier. VRRM = 50V, VRMS = 35V, VDC = 50V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 36 K |
| DB101 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 4 | -65°C | 150°C | 272 K |
| DB1012S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 1200V, maxVRMS = 840V, maxVDC = 1200V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 21 K |
| DB101S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | distributor | - | 4 | -55°C | 150°C | 20 K |
| EDB101 | Glass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 28 K |
| EDB101S | Glass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 27 K |
| ZLNB101N8 | Dual polarisation switch twin LNB multiplex controller | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 77 K |
| ZLNB101N8 | Dual polarisation switch twin LNB multiplex controller | Zetex-Semiconductor | SO | 8 | -40°C | 85°C | 77 K |
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