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B1012

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SB1012(K)Bipolar power switching Darlington transistordistributor----33 K
CEB1012N-channel enhancement mode field transistorChino-Excel-Technology-Corporation-3-65°C150°C498 K
CEB1012LN-channel enhancement mode field transistorChino-Excel-Technology-Corporation-3-65°C150°C497 K
DB1012SSingle-phase glass passivated silicon bridge rectifier. MaxVRRM = 1200V, maxVRMS = 840V, maxVDC = 1200V. Current 1.0A.distributor-4-65°C150°C21 K
TSMB1012Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective devicedistributorSMB2-55°C150°C46 K
VTB1012Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K.distributor-2-40°C110°C27 K
VTB1012BProcess photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K.distributor-2-40°C110°C27 K
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