| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1033 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| DB103 | Single-phase glass passivated silicon bridge rectifier. VRRM = 200V, VRMS = 140V, VDC = 200V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 36 K |
| DB103 | Single-phase glass passivated silicon bridge rectifier. VRRM = 200V, VRMS = 140V, VDC = 200V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 36 K |
| DB103 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS bridge input voltage 140V. Maximum DC blocking voltage 200V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 4 | -65°C | 150°C | 272 K |
| DB103G | 200 V, 1A glass passivated single-phase bridge rectifier | distributor | DFM | 4 | -55°C | 150°C | 52 K |
| DB103G | 200 V, 1A glass passivated single-phase bridge rectifier | distributor | DFM | 4 | -55°C | 150°C | 52 K |
| DB103S | 1.0A single-phase surface mount bridge rectifier | distributor | - | 4 | -55°C | 150°C | 424 K |
| DB103S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A. | distributor | - | 4 | -55°C | 150°C | 20 K |
| EDB103S | Glass passivated super fast silicon surface mount bridge rectifier. MaxVRRM = 150V, maxVRMS = 105V, maxVDC = 150V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 27 K |
| SB1030FCT | Reverse voltage: 30.00V; 10A isolated schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 39 K |
| SB1030FCT | Reverse voltage: 30.00V; 10A isolated schottky barrier rectifier | distributor | - | 2 | -65°C | 150°C | 39 K |
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