| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1072(L) | Bipolar power switching Darlington transistor | distributor | DPAK | - | - | - | 35 K |
| 2SB1072(S) | Bipolar power switching Darlington transistor | distributor | DPAK | - | - | - | 35 K |
| 2SB1073 | Silicon PNP epitaxial planar type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 35 K |
| 2SB1079 | Bipolar power switching Darlington transistor | distributor | - | - | - | - | 36 K |
| DB107 | 1.0A single-phase silicon bridge rectifier | distributor | - | 4 | -65°C | 150°C | 375 K |
| DB107 | Single-phase glass passivated silicon bridge rectifier. VRRM = 1000V, VRMS = 700V, VDC = 1000V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 36 K |
| DB107 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS bridge input voltage 700V. Maximum DC blocking voltage 1000V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 4 | -65°C | 150°C | 272 K |
| DB107G | 1000 V, 1A glass passivated single-phase bridge rectifier | distributor | DFM | 4 | -55°C | 150°C | 52 K |
| DB107G | 1000 V, 1A glass passivated single-phase bridge rectifier | distributor | DFM | 4 | -55°C | 150°C | 52 K |
| DB107S | 1.0A single-phase surface mount bridge rectifier | distributor | - | 4 | -55°C | 150°C | 424 K |
| DB107S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A. | distributor | - | 4 | -55°C | 150°C | 20 K |
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