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B10N

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MHPM6B10N120SSHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
MTB10N40ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C273 K
STB10NA40N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----127 K
STB10NB20N-CHANNEL 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFETSGS-Thomson-Microelectronics----81 K
STB10NB50N-CHANNEL 500V - 0.55 OHM - 10.6A - D2PAK POWERMESH MOSFETSGS-Thomson-Microelectronics----85 K
STB10NC50N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFETSGS-Thomson-Microelectronics----55 K
STB10NC50-1N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFETSGS-Thomson-Microelectronics----55 K
STGB10N60LN-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBTSGS-Thomson-Microelectronics----88 K
STGB10NB37LZN-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBTSGS-Thomson-Microelectronics----92 K
VNB10N07OMNIFET FULLY AUTOPROTECTED POWER MOSFETSGS-Thomson-Microelectronics----159 K
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