Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
MHPM6B10N120SS | Hybrid power module | Motorola | ISSUE A | 17 | -40°C | 150°C | 265 K |
MTB10N40E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 273 K |
STB10NA40 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 127 K |
STB10NB20 | N-CHANNEL 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 81 K |
STB10NB50 | N-CHANNEL 500V - 0.55 OHM - 10.6A - D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
STB10NC50 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
STB10NC50-1 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
STGB10N60L | N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 88 K |
STGB10NB37LZ | N-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
VNB10N07 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 159 K |
1 [2] |
---|