Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQB10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 794 K |
FQB10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 574 K |
PHB10N40 | PowerMOS transistor. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 69 K |
PHB10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
STB10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
STB10NK60Z-1 | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
STB10NK60Z-1 | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
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