Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SB1201 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2044B | 3 | - | - | 123 K |
2SB1202 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2044B | 3 | - | - | 128 K |
2SB1203 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2044B | 3 | - | - | 135 K |
2SB1204 | PNP epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2044B | 3 | - | - | 132 K |
2SB1205 | PNP epitaxial planar silicon transistor, strobe high-current switching application | SANYO-Electric-Co--Ltd- | 2044B | 3 | - | - | 92 K |
LB1205 | High-voltage, high-current darlington driver | SANYO-Electric-Co--Ltd- | DIP16F | 16 | -20°C | 75°C | 70 K |
SB120-05H | Shottky barrier diode, 50V/12A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 124 K |
SB120-05R | Shottky barrier diode, 50V/12A rectifier | SANYO-Electric-Co--Ltd- | 1180 | 3 | - | - | 81 K |
SB120-18 | Shottky barrier diode, 180V/12A rectifier | SANYO-Electric-Co--Ltd- | 1160 | 3 | - | - | 80 K |
STGD7NB120S-1 | N-CHANNEL 7A - 1200V IPAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 43 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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