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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
PHB160N03T30 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT3-55°C175°C271 K
PLB16004U40 V, microwave power transistorPhilips-SemiconductorsSOT3--66 K
PXB16050U45 V, NPN microwave power transistorPhilips-SemiconductorsSOT3--74 K
PZB16035U40 V, NPN microwave power transistorPhilips-SemiconductorsSOT3--67 K
SB16060 V, 1 A,schottky barrier rectifierdistributor-2-50°C125°C145 K
SB160S60 V, 1 A,schottky barrier rectifierdistributor-2-50°C125°C145 K
STB160NF02LN-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----289 K
STB160NF03LN-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----431 K
STB160NF3LLN-CHANNEL 30V - 0.0026 OHM - 160A D2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----174 K
Z2SMB160160 V, 5 mA, 2 W surface mounted glass passivated zener diodedistributorSMB2-65°C175°C63 K
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