| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB23NQ15T | 150 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 101 K |
| PTB23001X | NPN microwave power transistor. | Philips-Semiconductors | SOT440A | 3 | 0°C | 200°C | -- |
| PTB23003X | 40 V, NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 58 K |
| PTB23003X | 40 V, NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 58 K |
| PTB23003X | NPN microwave power transistor. | Philips-Semiconductors | SOT440A | 3 | 0°C | 200°C | 99 K |
| PTB23005X | NPN microwave power transistor. | Philips-Semiconductors | SOT440A | 3 | 0°C | 200°C | 99 K |
| PTB23006U | 40 V, microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 75 K |
| T10B230B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Bulk (500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| T10B230T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Tape and reeled (1500pcs). | distributor | - | 2 | -40°C | 150°C | 70 K |
| XC6204B232ML | low noise, positive voltage LDO regulators, no pull-down resistor built in, output 2.3V +/-2% | Torex-Semiconductor-Ltd- | - | 5 | -40°C | 85°C | 1 M |
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