| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BB555 | Silicon tuning diode | Infineon-formely-Siemens | - | 2 | -55°C | 150°C | 18 K |
| MTB55N06Z | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 146 K |
| MTU8B55EM | EPROM-based 8-bit CMOS microcontroller | distributor | PDIP | 28 | -40°C | 85°C | 286 K |
| MTU8B55EN | EPROM-based 8-bit CMOS microcontroller | distributor | PDIP | 28 | -40°C | 85°C | 286 K |
| MTU8B55EP | EPROM-based 8-bit CMOS microcontroller | distributor | SOP | 28 | -40°C | 85°C | 286 K |
| RB551V-30 | Schottky barrier diode | ROHM | UMD2 | 2 | - | - | 57 K |
| SB550 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 40 K |
| SB550 | 5.0 Ampere High Current Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 34 K |
| SB550 | Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 35 K |
| STB55NE06L | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
