| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB55N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 601 K |
| M29W004BB55N1 | 4 MBIT (512KB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY | SGS-Thomson-Microelectronics | - | - | - | - | 157 K |
| M29W400BB55N1 | 4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY | SGS-Thomson-Microelectronics | - | - | - | - | 146 K |
| MTB55N06Z | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 146 K |
| PHB55N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 107 K |
| PHB55N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 109 K |
| PHB55N03LTA | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 296 K |
| STB55NE06 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 98 K |
| STB55NE06L | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
| STB55NF03L | N-CHANNEL 30V - 0.01 OHM - 55A D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 81 K |
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