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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB55N10100V N-Channel MOSFETFairchild-Semiconductor----671 K
M29F102BB55N1T1 Mbit (64Kb x16, boot block) single supply flash memory, 55nsSGS-Thomson-MicroelectronicsTSOP400°C70°C173 K
SDB55N0220V; 55A; 75W; N-channel enchanced mode field effect transistordistributor-3-65°C175°C412 K
SDB55N0220V; 55A; 75W; N-channel enchanced mode field effect transistordistributor-3-65°C175°C412 K
SDB55N03L30V; 55A; 75W; N-channel enchanced mode field effect transistordistributor-3-65°C175°C417 K
SDB55N03L30V; 55A; 75W; N-channel enchanced mode field effect transistordistributor-3-65°C175°C417 K
STB55NF03L-1N-CHANNEL 30V - 0.01 OHM - 55A TO220/D2PAK/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----338 K
STB55NF06-1N-CHANNEL 60V - 0.017 OHM - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----485 K
STB55NF06LN-CHANNEL 60V - 0.014 OHM - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----454 K
STB55NF06L-1N-CHANNEL 60V - 0.014 OHM - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----454 K
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