| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB55N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 601 K |
| MTB55N06Z | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 146 K |
| PHB55N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 107 K |
| PHB55N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 109 K |
| PHB55N03LTA | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 296 K |
| SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 412 K |
| SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 412 K |
| SDB55N03L | 30V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 417 K |
| SDB55N03L | 30V; 55A; 75W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -65°C | 175°C | 417 K |
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