| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB560 | PNP transistor for power amplifier applications, 100V, 0.7A | SANYO-Electric-Co--Ltd- | - | 3 | -55°C | 150°C | 405 K |
| B560C | 60V; 5.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection | distributor | - | 2 | -55°C | 125°C | 48 K |
| GNR60B561K | Varistor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V. | distributor | - | 2 | -40°C | 85°C | 58 K |
| HSB562 | Emitter to base voltage:5V 1A PNP epitaxial planar transistor for general purpose low grequency power amplifier applications | distributor | - | 3 | - | - | 40 K |
| HSB564A | Emitter to base voltage:5V 1A PNP epitaxial planar transistor for general purpose low frequency power amplifier applications | distributor | - | 3 | - | - | 35 K |
| KSB564A | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 41 K |
| SB560 | 60V; 5.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | distributor | - | 2 | -65°C | 150°C | 56 K |
| SB560 | 60 V, 5 A, high current schottky barrier rectifier | distributor | - | 4 | -50°C | 125°C | 165 K |
| SB560 | 60 V, 5 A,high current schottky barrier rectifier | distributor | DO | 2 | -50°C | 125°C | 165 K |
| STB5610 | GPS RF FRONT-END IC | SGS-Thomson-Microelectronics | - | - | - | - | 158 K |
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