| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB5N15 | 150V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 765 K |
| FQB5N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 704 K |
| FQB5N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 539 K |
| FQB5N30 | 300V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 770 K |
| FQB5N40 | 400V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 714 K |
| IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| STB5NA50 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
| STB5NA80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 131 K |
| STB5NB60 | N-CHANNEL 600V - 1.8 OHM - 5A - I2PAK/D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| STB5NB80 | N-CHANNEL 800V - 1.8 OHM - 5A - D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
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