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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB60N03L30V LOGIC N-Channel MOSFETFairchild-Semiconductor------
MTB60N06HDHDTMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C280 K
PHB60N06LTTrenchMOS transistor. Logic level FET.Philips-SemiconductorsSOT4043-55°C175°C71 K
SDB60N03L30V; 60A; 75W; N-channel logic level enchanced mode field effect transistordistributor-3-65°C175°C416 K
SDB60N03L30V; 60A; 75W; N-channel logic level enchanced mode field effect transistordistributor-3-65°C175°C416 K
STB60NF06N-CHANNEL 60V 0.014 OHM 60A D2PAK STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----425 K
STB60NF06LN-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----472 K
STB60NH02LN-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFETSGS-Thomson-Microelectronics----423 K
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