| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BB620 | Silicon variable capacitance diode | Infineon-formely-Siemens | - | 2 | -55°C | 125°C | 30 K |
| OPB620 | Slotted optical switch | distributor | - | 4 | -40°C | 100°C | 331 K |
| SB620 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Ta = 75degC 6 A. | distributor | - | 2 | -50°C | 125°C | 89 K |
| SB620 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Ta = 75degC 6 A. | distributor | - | 2 | -50°C | 125°C | 89 K |
| SB620CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Ta = 75degC 6 A. | distributor | - | 3 | -50°C | 125°C | 91 K |
| SB620F | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 6 A. | distributor | - | 2 | -50°C | 125°C | 89 K |
| SB620FCT | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 6 A. | distributor | - | 3 | -50°C | 125°C | 92 K |
| TB62004FW | 8ch DMOS transistor array with gate | Toshiba | - | 20 | -40°C | 85°C | 297 K |
| TB62006FW | 8ch DMOS transistor array with gate | Toshiba | - | 20 | -40°C | 85°C | 297 K |
| TB62009F | 8ch DMOS transistor array with gate | Toshiba | - | 20 | -40°C | 85°C | 297 K |
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