Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFIB6N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
MTB6N60E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 192 K |
MTB6N60E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
PHB6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
PHB6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
STB6NA60 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 130 K |
STB6NA60 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 130 K |
STB6NA80 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
STB6NB50 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
STB6NB90 | N-CHANNEL 900V - 5.8A - 1.7 OHM - D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 48 K |
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