| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB6N15 | 150V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 764 K |
| FQB6N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 738 K |
| FQB6N45 | 450V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 582 K |
| FQB6N50 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 762 K |
| FQB6N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 547 K |
| FQB6N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 683 K |
| FQB6N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 596 K |
| PHB6ND50E | 500 V, power MOS transistor FREDFET, avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| STB6NC60-1 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 364 K |
| STB6NC80Z | N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 511 K |
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