| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16S64BAMD-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH16S64BAMD-7 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH16S72BAMD-10 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BAMD-10 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 592 K |
| MH16S72BAMD-7 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BAMD-7 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 592 K |
| MH16S72BAMD-8 | 1,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 592 K |
| MH16S72BAMD-8 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 592 K |
| S-8321BAMP-DTA-T2 | Small package PFM control step-up switching regulator | Seiko-Epson-Corporation | - | 3 | -40°C | 85°C | 1 M |
| S-8322BAMP-DUA-T2 | Small package PFM control step-up switching regulator | Seiko-Epson-Corporation | - | 3 | -40°C | 85°C | 1 M |
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