| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC107 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC108 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC109 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 175°C | 228 K |
| BC109 | TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 141 K |
| GC79BNBC10R | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
| GC79BNBC10RD | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
| GC79BNBC10RS | Ins.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks | distributor | - | - | - | - | 852 K |
| IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
| IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 217 K |
| IRG4BC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International-Rectifier | - | 3 | -55°C | 150°C | 184 K |
| [1] 2 [3] [4] [5] |
|---|
