| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC212 | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 107 K |
| BC212B | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 107 K |
| BC213 | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 107 K |
| BC214 | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 107 K |
| BC237 | NPN silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 112 K |
| CL7512ABC256-10 | Laser processed logic device | distributor | BGA | 256 | 0°C | 70°C | 172 K |
| CL7512ABC256-15 | Laser processed logic device | distributor | BGA | 256 | 0°C | 70°C | 172 K |
| CL7512ABC256-6 | Laser processed logic device | distributor | BGA | 256 | 0°C | 70°C | 172 K |
| CL7512ABC256-7 | Laser processed logic device | distributor | BGA | 256 | 0°C | 70°C | 172 K |
| IRFBC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.2A | International-Rectifier | - | 3 | -55°C | 150°C | 171 K |
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