| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BC307 | 300mW PNP silicon planar epitaxial transistor | distributor | - | 2 | -55°C | 150°C | 225 K |
| BC307 | PNP silicon amplifier transistor | Motorola | - | 3 | -55°C | 150°C | 110 K |
| BC307 | 50 V, PNP general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 52 K |
| BC307 | Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. | distributor | - | 3 | 0°C | 150°C | 48 K |
| BC307B | 50 V, PNP general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 52 K |
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