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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C234 K
IRGBC30UD2Insulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C413 K

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