| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME8501CEETBC46 | Reset time: 30mS; micropower uP reset device | distributor | - | 3 | -40°C | 85°C | 70 K |
| IRFBC40A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 97 K |
| IRFBC40AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 111 K |
| IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
| IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
| IRFBC40S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 350 K |
| IRFIBC40G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| IRFIBC40GLC | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | distributor | EBGA | 432 | -40°C | 85°C | 3 M |
| OR2T40B-4BC432I | ORCA feild-programmable gate array. Voltage 3.3 V. | distributor | EBGA | 432 | -40°C | 85°C | 3 M |
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