Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC413 | 300mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 130 K |
BC414 | 300mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 130 K |
BC415 | 300mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 130 K |
BC416 | 300mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 130 K |
IRG4BC40 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
IRG4BC40K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A | International-Rectifier | - | 3 | -55°C | 150°C | 156 K |
IRG4BC40S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
IRG4BC40W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 129 K |
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