| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR129 | NPN silicon digital transistor | Infineon-formely-Siemens | - | 3 | - | - | 34 K |
| BCR129S | NPN silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 42 K |
| BCR12CM-12 | 600V, 12A triac | distributor | - | - | - | - | 80 K |
| BCR12CM-8 | 400V, 12A triac | distributor | - | - | - | - | 80 K |
| BCR12CM-8L | 400V, 12A triac | distributor | - | - | - | - | 80 K |
| BCR12CM-8L | 400V, 12A triac | distributor | - | - | - | - | 80 K |
| BCR12CS | 12A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 86 K |
| BCR12KM-14 | 12A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 31 K |
| BCR12PM | 12A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 93 K |
| BCR12PM-14 | 12A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 61 K |
| BCR12UM | 12A semiconductor for medium power use, insulated type, glass passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 56 K |
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