| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR30AM | 30A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 88 K |
| BCR30AM-12 | 600V, 30A triac | distributor | - | - | - | - | 71 K |
| BCR30AM-12L | 600V, 30A triac | distributor | - | - | - | - | 71 K |
| BCR30GM | 30A semiconductor for medium power use, non-insulated type, glass passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 90 K |
| BCR35PN | NPN/PNP silicon digital transistor array | Infineon-formely-Siemens | - | 6 | - | - | 62 K |
| BCR3AM | 3A semiconductor for low power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 98 K |
| BCR3AS | 3A semiconductor for low power use, non-insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 125°C | 86 K |
| BCR3KM | 3A semiconductor for low power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 48 K |
| BCR3KM-14 | 3A semiconductor for low power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 31 K |
| BCR3PM | 3A semiconductor for low power use, insulated type, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 92 K |
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