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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BD24145 V, complementary NPN silicon power transistordistributor-3-65°C150°C139 K
BD2414mW NPN silicon epitaxial base power transistordistributor-3-55°C150°C97 K
BD241A60 V, complementary NPN silicon power transistordistributor-3-65°C150°C139 K
BD241A4mW NPN silicon epitaxial base power transistordistributor-3-55°C150°C97 K
BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40Wdistributor-3-65°C150°C47 K
BD241B4mW NPN silicon epitaxial base power transistordistributor-3-55°C150°C97 K
BD241B90 V, NPN silicon power transistordistributor-3-65°C150°C432 K
BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40Wdistributor-3-65°C150°C47 K
BD241C115 V, NPN silicon power transistordistributor-3-65°C150°C432 K
BD241CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40Wdistributor-3-65°C150°C47 K
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