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BD241B

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BD241B80 V, complementary NPN silicon power transistordistributor-3-65°C150°C139 K
BD241B4mW NPN silicon epitaxial base power transistordistributor-3-55°C150°C97 K
BD241B3Ampere complementary silicon plastic power transistordistributor-3-65°C150°C133 K
BD241BNPN complementary silicon plastic power transistorMotorola-4-65°C150°C139 K
BD241BGeneral purpose NPN transistorPower-Innovations----87 K
BD241BCOMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-Microelectronics----66 K
BD241B90 V, NPN silicon power transistordistributor-3-65°C150°C432 K
BD241B90 V, NPN silicon power transistordistributor-3-65°C150°C432 K
BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40Wdistributor-3-65°C150°C47 K
BD241BFPCOMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-Microelectronics----29 K
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