Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BD241B | 80 V, complementary NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 139 K |
BD241B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
BD241B | 3Ampere complementary silicon plastic power transistor | distributor | - | 3 | -65°C | 150°C | 133 K |
BD241B | NPN complementary silicon plastic power transistor | Motorola | - | 4 | -65°C | 150°C | 139 K |
BD241B | General purpose NPN transistor | Power-Innovations | - | - | - | - | 87 K |
BD241B | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
BD241B | 90 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 432 K |
BD241B | 90 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 432 K |
BD241B | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W | distributor | - | 3 | -65°C | 150°C | 47 K |
BD241BFP | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 29 K |
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