| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BDX54 | 45 V, PNP silicon power darlington | distributor | - | 3 | -65°C | 150°C | 718 K |
| BDX54 | PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
| BDX54A | PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
| BDX54B | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX54B | Complementary silicon power darlington transistor | SGS-Thomson-Microelectronics | - | 3 | - | - | -- |
| BDX54B | PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
| BDX54C | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX54C | Complementary silicon power darlington transistor | SGS-Thomson-Microelectronics | - | 3 | - | - | -- |
| BDX54C | PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
| BDX54F | TRANSISTOR DARLINGTON TO-220 | SGS-Thomson-Microelectronics | - | - | - | - | 47 K |
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