Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AME8805BEGT | Output voltage: 3.0V; 600mA CMOS LDO | distributor | - | 3 | -40°C | 85°C | 88 K |
AME8808BEGT | Output voltage: 3.0V; 750mA CMOS LDO | distributor | - | 3 | -40°C | 85°C | 85 K |
AME8810BEGT | Output voltage: 3.0V; 600mA CMOS LDO | distributor | - | 3 | -40°C | 85°C | 88 K |
AME8815BEGT150 | Output voltage: 1.50; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
AME8815BEGT180 | Output voltage: 1.80; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
AME8815BEGT250 | Output voltage: 2.50; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
AME8815BEGT330 | Output voltage: 3.30; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
AME8815BEGT475 | Output voltage: 4.75; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
AME8815BEGT500 | Output voltage: 5.00; 1.5A CMOS LDO | distributor | - | 3 | -40°C | 85°C | 113 K |
THMY721661BEG-80 | 16,777,216-words by 72-BITS synchronous DRAM module | Toshiba | DIMM | 168 | 0°C | 70°C | 650 K |
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