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BF96

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BF960N-channel dual gate MOS-fieldeffect tetrodeVishay-Telefunken-4-55°C150°C570 K
BF961N-Channel depletion mode dual-gate Si-MOSFET RF transistorVishay-TelefunkenTO50(4)---122 K
BF964SN-Channel depletion mode dual-gate Si-MOSFET RF transistorVishay-TelefunkenTO50(4)---127 K
BF966SN-Channel depletion mode dual-gate Si-MOSFET RF transistorVishay-TelefunkenTO50(4)---127 K
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