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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB3117405BJ-60 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB314100BJ-60 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB314171BJ-60 | 256K x 16bit DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314175BJ-60 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 1 M |
| HYB314400BJ-60 | 1M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 126 K |
| HYB314405BJ-60 | 1M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
| HYB5116165BJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5117405BJ-60 | 4M x 4bit EDO-DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 143 K |
| HYB5117805BJ-60 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 258 K |
| HYB5118165BJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
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