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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB3117805BJ-60 | 2M x 8bit EDO-DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 258 K |
| HYB3164405BJ-60 | 16M x 4bit DRAM | Infineon-formely-Siemens | - | 32 | 0°C | 70°C | 303 K |
| HYB3164805BJ-60 | 8M x 8bit DRAM | Infineon-formely-Siemens | - | 32 | 0°C | 70°C | 303 K |
| HYB3165405BJ-60 | 16M x 4bit DRAM | Infineon-formely-Siemens | - | 32 | 0°C | 70°C | 303 K |
| HYB3165805BJ-60 | 8M x 8bit DRAM | Infineon-formely-Siemens | - | 32 | 0°C | 70°C | 303 K |
| HYB514100BJ-60 | 4M x 1bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 108 K |
| HYB514171BJ-60 | 256K x 16bit DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 181 K |
| HYB514175BJ-60 | 256K x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 40 | 0°C | 70°C | 177 K |
| HYB514400BJ-60 | 1M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 124 K |
| HYB514405BJ-60 | 1M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 1 M |
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